发明名称 TRAY FOR VAPOR GROWTH AND VAPOR GROWTH METHOD
摘要 PURPOSE:To increase the product yield of vapor grown films by using trays each made of isotropic graphite having a specified anisotropy ratio when passivation of an interlayer insulator is formed in a stage for producing super- LSI. CONSTITUTION:Isotropic petroleum or coal graphite having <=1.2 anisotropy ratio is easily and accurately worked and the expansion coefft. is nearly independent of a temp. change. Strain is hardly produced in the graphite and the graphite hardly warps and has high corrosion resistance, so trays for vapor growth are made of the graphite and used in a vapor growth stage. Silicon carbide layers re desirably formed on the surfaces of the trays. The pref. thickness of the layers is about 20-200mum. When the trays are used, vapor grown films are improved and the yield can be increased.
申请公布号 JPS63227783(A) 申请公布日期 1988.09.22
申请号 JP19870058199 申请日期 1987.03.13
申请人 TOYO TANSO KK 发明人 MURAI KAZUO;OBARA TOSHIO
分类号 H01L21/31;C23C16/44;C23C16/458;H01L21/205 主分类号 H01L21/31
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