| 摘要 |
PURPOSE:To reduce diffused resistance elements and obtain an integrated circuit having a high degree of integration by mounting a MOS transistor whose gate electrodes are available also as the resistance elements in a standard cell. CONSTITUTION:All gate electrodes of respective MOS transistors of N1a and P1a in the standard cell 1 are composed of a polycrystal silicon substrate r having resistance values about 0.1-10 kOMEGA between two terminals. For example, the gate electrodes of a P channel MOS transistor P1a of a P channel MOS IC P1 have two terminals GR1ax and GR1ay. Thus, diffused resistance elements are reduced and an integrated circuit having a high degree of integration is obtained. |
