| 摘要 |
PURPOSE:To improve the reproducibility of a growth layer, by dividing a dilu tion chamber into a plurality of chambers with partitions having a plurality of small holes, when material gas and carrier gas are introduced into a vapor growth chamber including a semiconductor substrate, via a bubbler and the dilution chamber. CONSTITUTION:Between gas feeding inlets 18-20 and a growth chamber 1 including a semiconductor substrate 6, bubblers 7, 8 are arranged via gas flow rate controlling equipments 11, 12, respectively. A dilution chamber 21 is con nected to the next stage of the bubbler 7. The tips of gas supplying tubes of the bubblers 7, 8 are formed in a multi-hole structure. The dilution chamber 21 are divided into a plurality of chambers by partitions having a plurality of small holes. The important matter is the structure of the dilution chamber 21. The chamber is made of stainless steel, and divided into a plurality of dilu tion chambers between gas intaking inlets 32, 33 and gas discharging vents 34, 35, by the same stainless steel partitions 36 having a small center hole 37 and a plurality of small peripheral holes 38. Thereby, the composition ratio of a growth layer can be finely controlled, and the growth layer having theoreti cal values can be obtained.
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