发明名称 Integrated circuit device having a chip
摘要 A semiconductor chip circuit device includes cell arrays having pairs of an n-channel device formation region and a p-channel device formation region. Conductive power source lines are selectively formed between the pairs and are situated in grooves in the substrate. The conductive lines are selectively connected to impurity introduction regions in each formation region of each pair. An insulating layer is formed in the grooves over the conductive lines, and wirings selectively connect a plurality of pairs formed on the insulating layer.
申请公布号 US4928164(A) 申请公布日期 1990.05.22
申请号 US19890393037 申请日期 1989.08.10
申请人 FUJITSU LIMITED 发明人 TANIZAWA, TETSU
分类号 H01L21/822;H01L21/3205;H01L21/76;H01L21/82;H01L21/8238;H01L23/52;H01L23/535;H01L27/04;H01L27/092;H01L27/118 主分类号 H01L21/822
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