FORMATION OF SEMICONDUCTOR LAYER INTO SINGLE CRYSTAL,申请号JP19890006701-传众专利搜索

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发明名称	FORMATION OF SEMICONDUCTOR LAYER INTO SINGLE CRYSTAL
摘要
申请公布号	JPH02187017(A)	申请公布日期	1990.07.23
申请号	JP19890006701	申请日期	1989.01.13
申请人	FUJITSU LTD	发明人	MATSUOKA HIDETATSU
分类号	C30B1/08;H01L21/20;H01L21/268;H01L27/00	主分类号	C30B1/08
代理机构		代理人
主权项
地址

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