| 摘要 |
PURPOSE:To increase a current amplification factor, to reduce a leakage current and to enhance breakdown strength between an emitter and a collector by narrowing the width of a base region at a center as compared with its both ends. CONSTITUTION:An SiO2 film 102 is formed on a p-type Si substrate 101, Si is grown thereon to form a SOI Si layer 103. After it is then coated with a first resist 104, a p-type base region 105 is formed by ion implanting. The resist 104 is removed, it is coated with a second resist 106, and ions are implanted to form an n-type collector region 107 and emitter region 108. |
