| 摘要 |
A method for producing an avalanche photodiode structured as n<+>-p-π-p<+> or n<+> II-p-π-p<+> with a large active n<+> and an anti-reflective layer. The method is distinctive in that the n<+> area (3) is formed by way of arsenic diffusion from amorphic or polycrystal silicon, the latter having been pre-formed by chemical deposition from a gas phase in the temperature of 520-600 degrees C under pressure of <=2Tr and with admixture of arsenic in the deposit-forming stage. The anti-reflective layer (7) of silicon dioxide is made on the surface of the active n<+> area (3) in the course of recrystallization and oxidisation of previously deposited amorphic or polycrystal silicon.<IMAGE>
|
