| 发明名称 |
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH IMPROVED ELECTROMIGRATION RESISTANCE |
| 摘要 |
To improve electromigration resistance and stress migration resistance, when a film is formed by depositing Al or Al alloy on a semiconductor substrate (11), the film (13, 14) is formed stepwise by stepwise changing the heating temperature of the semiconductor substrate at at least two stages. <IMAGE> |
| 申请公布号 |
EP0488264(A3) |
申请公布日期 |
1992.07.22 |
| 申请号 |
EP19910120354 |
申请日期 |
1991.11.28 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KATSURA, TOSHIHIKO;ABE, MASAHIRO;IGUCHI, TOMOYUKI |
| 分类号 |
H01L23/52;H01L21/28;H01L21/285;H01L21/3205;H01L23/532;(IPC1-7):H01L21/285;H01L21/90 |
主分类号 |
H01L23/52 |
| 代理机构 |
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代理人 |
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| 主权项 |
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