| 摘要 |
The isolation method for fabricating a self-aligned submicron device comprises (a) forming a gate line of the 1st conductive type on semiconductor substrate (10), forming an impurity region of the 2nd conductive type (13) by ion implantation, (b) forming an isolated gate electrode by selective etching the gate line, (c) forming an impurity layer of the 1st conductive type, (d) forming an oxide layer (14), SOG layer (15), (e) exposing the substrate by etching the SOG layer, (f) forming a trench, (g) and refilling the trench with an insulating layer.
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