PRODUCTION OF SEMICONDUCTOR WITH MULTILAYERED WIRING CONSTRUCTION,申请号JP19920330006-传众专利搜索

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发明名称	PRODUCTION OF SEMICONDUCTOR WITH MULTILAYERED WIRING CONSTRUCTION
摘要
申请公布号	JPH06163725(A)	申请公布日期	1994.06.10
申请号	JP19920330006	申请日期	1992.11.16
申请人	NIPPON STEEL CORP	发明人	TANI TOMOFUNE
分类号	H01L21/316;H01L21/31;H01L21/3205;H01L21/768;H01L23/52;(IPC1-7):H01L21/90;H01L21/320	主分类号	H01L21/316
代理机构		代理人
主权项
地址

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