Thin-film transistor using nano-crystalline thin-film as active layer, and method for fabricating the same

摘要

A top-gate thin-film transistor includes a substrate 10 made of glass, silicon, or plastic; a hydrophilic buffer layer 15 deposited on the substrate to facilitate the formation of a nano- crystalline thin-film thereon; a thermally treated nano-crystalline thin-film layer 20 as an active layer; source and drain electrodes 31, 32; a gate insulating layer 40 formed on the nano-crystalline thin-film layer by use of a high dielectric constant insulator and a top-gate electrode 50 formed on the gate insulating layer. With this configuration, the top-gate thin-film transistor and a logic circuit using the same can be operated at low voltages and be fabricated at low-temperatures.