METHOD FOR FABRICATING OF WAFER

摘要

A method for processing a wafer is provided to improve the surface roughness of the upper silicon layer of wafer by performing an etching until the boron ion injection part is exposed. The insulating layer(112) is formed on the surface of the wafer(110). The hydrogen ion is injected to the wafer. The boron ion is injected to the wafer with a different depth from the hydrogen injected depth. The hydrogen ion injected part is heat-treated to expose the boron ion injected part. The exposed part of the wafer is reduced to leave the boron ion injected part. The surface of the wafer is etched until the boron ion injected part is exposed.