发明名称 |
Dual liner capping layer interconnect structure and method |
摘要 |
A high tensile stress capping layer on Cu interconnects in order to reduce Cu transport and atomic voiding at the Cu/dielectric interface. The high tensile dielectric film is formed by depositing multiple layers of a thin dielectric material, each layer being under approximately 50 angstroms in thickness. Each dielectric layer is plasma treated prior to depositing each succeeding dielectric layer such that the dielectric cap has an internal tensile stress.
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申请公布号 |
US7576003(B2) |
申请公布日期 |
2009.08.18 |
申请号 |
US20060564314 |
申请日期 |
2006.11.29 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
YANG CHIH-CHAO;YANG HAINING;WONG KEITH KWONG HON |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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地址 |
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