发明名称 System for characterization of low-k dielectric material damage
摘要 A method of detecting damage to at least one dielectric layer in an IC die by determining a capacitance factor. The capacitance factor can be used to determine damage in a low-k dielectric material. A system for detecting damage can include a conductive line structure for measuring capacitance and software or a device for determining the capacitance to determine the damage.
申请公布号 US7576357(B1) 申请公布日期 2009.08.18
申请号 US20050259572 申请日期 2005.10.26
申请人 ADVANCED MICRO DEVICES, INC. 发明人 ZHU JIANHONG;WU DAVID
分类号 H01L23/58 主分类号 H01L23/58
代理机构 代理人
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