| 发明名称 |
PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE AND APPARATUS THEREFOR |
| 摘要 |
A process for producing a semiconductor device, includes: first melting by heating only a superior portion of a bump formed on an electrode on one principle surface of a semiconductor substrate; and second melting the entire bump by also heating an inferior portion of the bump.
|
| 申请公布号 |
US2009184156(A1) |
申请公布日期 |
2009.07.23 |
| 申请号 |
US20090412970 |
申请日期 |
2009.03.27 |
| 申请人 |
FUJITSU MICROELECTRONICS LIMITED |
发明人 |
MATSUI HIROYUKI;MAKINO YUTAKA;AKUTAGAWA YOSHITO |
| 分类号 |
B23K1/20;B23K3/04;B23K31/02 |
主分类号 |
B23K1/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
