| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a group III nitride semiconductor crystal having excellent productivity and excellent crystallinity, and to provide a group III nitride semiconductor crystal. <P>SOLUTION: The method for manufacturing a group III nitride semiconductor crystal includes stacking an intermediate layer 12 comprising at least a group III nitride compound on a substrate 11 and forming a film of a group III nitride semiconductor crystal on the intermediate layer 12. The method includes: a pretreatment step of subjecting the substrate 11 to a plasma treatment in a temperature range from 25°C to 1,000°C of the substrate 11 and in a treatment time of from 30 seconds to 3,600 seconds; and a subsequent sputtering step of forming the intermediate layer 12 on the substrate 11 by a sputtering method. <P>COPYRIGHT: (C)2009,JPO&INPIT |
