| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of preventing a metal film in a wiring groove from being eluted into an electrolyte, in over-polishing using electrolytic composite polishing. SOLUTION: The method of manufacturing a semiconductor device includes: a step (a) of forming a barrier metal film on the wiring groove formed on an interlayer dielectric on a semiconductor substrate and the whole surface of the interlayer dielectric; and a step (b) of depositing a metal film on the barrier metal film after the step (a). The manufacturing method includes a step (c) of reducing the film thickness of the metal film after the step (b), and separating the metal film embedded in the wiring groove from the metal film deposited on the interlayer dielectric. Accordingly, the metal films are prevented from being electrically connected from each other in the inside and outside of the wiring groove, and the metal film in the wiring groove can be prevented from being eluted into an electrolyte in electrolytic composite polishing executed later. COPYRIGHT: (C)2009,JPO&INPIT
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