| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress formation of a void as a connection defect caused by trapping of a gas in a connection layer by eliminating the need of working, such as, grooving on the reverse surface of a semiconductor element, even when a semiconductor is connected using a conductive adhesive producing a very large amount of gas. <P>SOLUTION: By introducing a process of connecting the semiconductor element 1 and a base material 2 to each other, while applying acceleration to the base material 2, a connection layer 7, and the semiconductor element 1 in a direction along a connection surface between the semiconductor element and base material, a gas can be efficiently dissipated to the outside of the connection layer in the process of connection. <P>COPYRIGHT: (C)2009,JPO&INPIT |
