| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve problems on a technique for improving performances in microfabrication of a semiconductor device using high-energy radiation, particularly an electron beam, X-ray or EUV light, and to provide a positive resist composition which simultaneously satisfies PED property in vacuum, line edge roughness and pattern profile particularly when an electron beam is used, and which is excellent in sensitivity and dissolution contrast when EUV light is used, and a pattern forming method using the composition. <P>SOLUTION: The positive resist composition includes (A) a star polymer or a hyper-branched polymer which includes three or more polymer chains through at least one branch part, and of which the solubility in an alkali developer increases by the action of an acid, (B) a compound which generates an acid by the action of a specific actinic ray or radiation, and (C) a surfactant. The pattern forming method using the composition is also provided. <P>COPYRIGHT: (C)2009,JPO&INPIT |
