| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which an ohmic electrode of low contact resistance over a long period of time to an n-type nitride semiconductor layer, and to provide a manufacturing method therefor. SOLUTION: The semiconductor device is provided with an n-type semiconductor layer 10, a first metal layer 20 formed on the n-type semiconductor layer 10, a second metal layer 30 formed on the first metal layer 20, and SiN<SB>y</SB>40 formed so as to cover the surface of the n-type semiconductor layer 10, the side faces of the first and the second metal layers 20 and 30, and the surface which excludes a prescribed region on the second metal layer 30. COPYRIGHT: (C)2009,JPO&INPIT
|
