发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device capable of being manufactured by a simple manufacturing method, capable of preventing a contact plug from becoming a high resistance, and causing no diffusion of constituting materials of the contact plug into a source-drain region. SOLUTION: The semiconductor device has a gate electrode 4, a first interlayer dielectric 7, a first contact plug 8, a second interlayer dielectric 9, and a second contact plug 10. The top face of the first interlayer dielectric 7 has the same elevation as that of the top face of the gate electrode 4. The first contact plug 8 is formed penetrating the first interlayer dielectric 7 in the thickness direction thereof, is electrically-connected with a source-drain region 5 at the bottom face thereof, and has a first electric resistivity. The second contact plug 10 is formed penetrating the second interlayer dielectric 9 in the thickness direction thereof, is electrically-connected with the top face of the first contact plug 8 at the bottom face thereof, and has a second electric resistivity lower than the first electric resistivity. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009164391(A) 申请公布日期 2009.07.23
申请号 JP20080001314 申请日期 2008.01.08
申请人 RENESAS TECHNOLOGY CORP 发明人 TSUTSUMI TOSHIAKI;MAEKAWA KAZUYOSHI;MORI KENICHI;ICHINOSE KAZUHITO;YUYA AKISHIGE
分类号 H01L21/768;H01L21/28;H01L21/336;H01L21/8238;H01L23/522;H01L27/092;H01L29/78 主分类号 H01L21/768
代理机构 代理人
主权项
地址