发明名称 SEMICONDUCTOR MEMORY
摘要 <p><P>PROBLEM TO BE SOLVED: To prevent any failure due to latch-up by protecting at least a flash memory section from over-currents. <P>SOLUTION: A plurality of flash memories 2; a connector for connecting to a host device 100; a cache memory 4 for data transfer between the plurality of flash memories 2 and the host device 100; a drive control circuit 3 for controlling data transfer between the plurality of flash memories 2 and the host device 100; and a power supply circuit 5 for converting an external power supply voltage into an internal power supply voltage are loaded on a substrate, and a fuse 10 for protecting at least the flash memory 2 from the over-currents is arranged on the substrate. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009163409(A) 申请公布日期 2009.07.23
申请号 JP20070340957 申请日期 2007.12.28
申请人 TOSHIBA CORP 发明人 SUGITA MASATO;MAEDA TAKASHI
分类号 G06F12/16;G06F1/26 主分类号 G06F12/16
代理机构 代理人
主权项
地址