METHOD FOR MANUFACTURING MEMORY ELEMENT COMPRISING RESISTIVITY-SWITCHING NiO LAYER AND DEVICES OBTAINED THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method for excellently holding data in an ON state in non-volatile memory devices comprising a reversible resistivity-switching layer used for storing data. SOLUTION: A resistivity-switching non-volatile memory element includes a resistivity-switching metal-oxide layer sandwiched between a top electrode and a bottom electrode. The metal-oxide layer has a gradient of oxygen over its thickness. COPYRIGHT: (C)2009,JPO&INPIT