| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device having an electrostatic discharge protection circuit capable of reducing processing steps, the development period, and the size. <P>SOLUTION: The semiconductor device comprises: an input/output pad (101); a supply voltage node (VDE) to which a supply voltage is supplied; a reference potential node (GND) to which a reference potential is supplied; a first diode (131) in which an anode is connected to the input/output pad, and a cathode is connected to the first node; a potential control circuit (103) which is connected to the input/output pad and the supply voltage node, and controls the first node to be the supply voltage when the voltage lower than the supply voltage is input into the input/output pad; a trigger circuit (109) which outputs a static ON-signal when a static is input into the input/output pad; and an electrostatic discharge surge pass circuit (108) which flows an electrostatic discharge current between the first node and the reference potential node when the static ON-signal is output. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
