METHOD OF FORMING POLYCRYSTALLINE SEMICONDUCTOR FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a method of forming a polycrystalline semiconductor film that forms a polycrystalline semiconductor film having a larger crystal grain size, with a manufacturing yield much higher than that of the conventional method. SOLUTION: An amorphous silicon film is formed on a substrate 10 formed of a glass plate or the like, and this amorphous silicon film is patterned to form main patterns P1 resembling islands or belts having a protruded end and a sub-pattern P2 for filling the gaps between the main patterns P1. While the substrate 10 is irradiated with the continuous wave laser beam, a polycrystalline semiconductor film is formed by scanning the laser irradiating region toward the rear end from the front end of the main patterns. COPYRIGHT: (C)2009,JPO&INPIT