| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing method which keeps high etching resistance of a photoresist layer comprising an ArF photoresist or an F2 photoresist when etching an antireflection layer or etching the antireflection layer and an etching objective layer. SOLUTION: The plasma processing method includes steps of: placing a workpiece W having an etching objective layer 161, an organic antireflection layer 162 covering the etching objective layer 161, and an ArF photoresist layer 163 having an opening pattern 163a formed therein for covering the organic antireflection layer 162, in a processing container; introducing H<SB>2</SB>as etching gas into the processing container; turning the etching gas into plasma to form a high-plasma resistance protection layer 163b including Si-C, Si-O, etc. on a surface of the ArF photoresist layer while etching the organic antireflection layer 162 through the opening pattern 163a of the ArF photoresist layer 163. COPYRIGHT: (C)2009,JPO&INPIT |
