Maskless method of preparing metal contacts in a semiconductor substrate for bonding

摘要

A method is disclosed for preparing metal contacts (30) in a semiconductor substrate (10), the method comprising obtaining the metal contacts to protrude from a surface of the semiconductor substrate, the semiconductor substrate having a passivation layer (40) over the surface and over the protruding metal contacts, and removing parts of the passivation layer to reveal the protruding metal contacts without requiring alignment of a patterned mask to the locations of the metal contacts.