发明名称 Variable initial program voltage magnitude for non-volatile storage
摘要 Multiple programming processes are performed for a plurality of non-volatile storage elements. Each of the programming process operates to program at least a subset of said non-volatile storage elements to a set of target conditions using program pulses. In one embodiment, a first programming pass includes soft programming and additional programming passes include the programming of data. In another embodiment, all of the programming process include programming data. For at least a subset of said programming processes, a program pulse associated with achieving a particular result for a respective programming process is identified. The identified program pulse is used to adjust programming for a subsequent programming process.
申请公布号 US7564715(B2) 申请公布日期 2009.07.21
申请号 US20070694990 申请日期 2007.03.31
申请人 SANDISK CORPORATION 发明人 MOKHLESI NIMA
分类号 G11C16/04 主分类号 G11C16/04
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