发明名称 |
Flash memory device having a split gate |
摘要 |
A flash memory device having a split gate that can prevent an active region and a floating gate electrode from being misaligned, and a method of manufacturing the same, includes sequentially stacking a gate oxide layer and a floating gate conductive layer on a semiconductor substrate, forming an isolation layer in a predetermined region of the semiconductor substrate where the floating gate conductive layer is formed, and defining an active region. Then, a local oxide layer is formed by oxidizing a predetermined part of the floating gate conductive layer on the active region. A floating gate electrode structure is formed by patterning the floating gate conductive layer using the local oxide layer.
|
申请公布号 |
US7564092(B2) |
申请公布日期 |
2009.07.21 |
申请号 |
US20060503126 |
申请日期 |
2006.08.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
RYU EUI-YOUL;KWON CHUL-SOON;KIM JIN-WOO;KIM YONG-HEE;KIM DAI-GEUN;KIM JOO-CHAN |
分类号 |
H01L21/8247;H01L29/76;H01L21/336;H01L27/115;H01L29/423;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8247 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|