发明名称 Method and apparatus for processing polysilazane film
摘要 A method of processing a polysilazane film includes a first heat process and a subsequent second heat process performed on a target substrate with a polysilazane coating film formed thereon. The first heat process is performed by supplying water vapor into a process area within a reaction container, which accommodates the target substrate, while setting the process area at a first temperature of from 390° C. to 410° C. The second heat process is performed by supplying water vapor into the process area, while setting the process area at a second temperature of from 600° C. to 800° C.
申请公布号 US7563481(B2) 申请公布日期 2009.07.21
申请号 US20040956125 申请日期 2004.10.04
申请人 TOKYO ELECTRON LIMITED 发明人 HISHIYA SHINGO;AOKI KIMIYA;WATANABE MASAHISA
分类号 C23C16/00;H01L21/768;B05D1/40;B05D3/02;B05D3/04;B05D3/10;H01L21/31;H01L21/312;H01L21/324 主分类号 C23C16/00
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