发明名称 |
Recessed gate electrode and method of forming the same and semiconductor device having the recessed gate electrode and method of manufacturing the same |
摘要 |
A recessed gate electrode structure includes a first recess and a second recess in communication with the first recess both formed in a substrate. The second recess is larger than the first recess. A gate dielectric layer is formed on a top surface of the substrate and on an inner surface of the first and second recesses. A first polysilicon layer fills the first recess and is doped with impurities at a first impurity density. A second polysilicon layer fills the second recess and is doped with the impurities at a second impurity density. A void is defined within the second polysilicon layer. A third polysilicon layer is formed on the gate dielectric and first polysilicon layers and is doped with the impurities at a third impurity density. Due to impurities in the second polysilicon layer, migration of the void within the second recess may be substantially prevented.
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申请公布号 |
US7563677(B2) |
申请公布日期 |
2009.07.21 |
申请号 |
US20060531239 |
申请日期 |
2006.09.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YOO DAE-HAN;LEE KONG-SOO;LEE CHANG-HOON;HYUNG YONG-WOO;LEE HYEON-DEOK;KIM HYO-JUNG;OH JUNG-HWAN;YOU YOUNG-SUB |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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