| 摘要 |
A method for time-gating the sensitivity of an imager structure having a plurality of photodiodes comprises applying an electric field over the photodiodes, the electric field having an amplitude and a polarity so as to reverse bias or slightly forward bias the photodiodes at a bias voltage below 0.5 Volts, and varying the photodiodes between high and low charge collection efficiency or sensitivity by changing the amplitude of the electric field over the photodiodes. A corresponding imager structure is also provided.
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