发明名称 Method of forming an interconnect including a dielectric cap having a tensile stress
摘要 An interconnect structure and method of making the same are provided. The interconnect structure includes a dielectric layer having a patterned opening, a metal feature disposed in the patterned opening, and a dielectric cap overlying the metal feature. The dielectric cap has an internal tensile stress, the stress helping to avoid electromigration from occurring in a direction away from the metal line, especially when the metal line has tensile stress.
申请公布号 US7563704(B2) 申请公布日期 2009.07.21
申请号 US20050162666 申请日期 2005.09.19
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 YANG CHIH-CHAO;CHANDA KAUSHIK;CLEVENGER LAWRENCE A.;WANG YUN-YU;YANG DAEWON
分类号 H01L21/4763;H01L21/44 主分类号 H01L21/4763
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