TELLURIUM PRECURSORS FOR GST FILMS IN AN ALD OR CVD PROCESS

摘要

A tellurium precursor for GST in ALD or CVD process is provided to form thin GST film without auxiliary plasma at low deposit temperature. A method for forming germanium-antimon-tellulium film on a substrate comprises: a step of providing a tellulium precursor on a semiconductor substrate; a step of adding alcohol on the semiconductor substrate to form a tellulium layer; and a step of maintaining the deposit temperature at 80-500°C. The tellulium precursor is selected from (R1R2R3Si)2Te, (R1R23Si)TeR4 and (R1R2R3Si)TeN(R4R5).