METHOD FOR MANUFACTURING WAFER TYPE SOLAR CELL

摘要

A method for manufacturing a wafer type solar cell is provided to remove a defect in a PN junction layer by inducing a Si-H bond by supplying a hydrogen ion to the PN junction layer through a thermal process. A PN junction layer consisting of a P type semiconductor layer and an N type semiconductor layer(200) formed in an upper part of the P-type semiconductor layer is formed by doping the N type dopant in the upper part of a P type semiconductor substrate(100). An anti-reflective layer(300) is formed in an upper side of the N type semiconductor layer. The N type dopant is activated and the defect in the PN junction layer is removed by performing a thermal process. A front electrode(500) connected to the N type semiconductor layer is formed. A rear electrode(600) connected to the P type semiconductor layer is formed.