发明名称 ORGANIC FIELD-EFFECT TRANSISTOR AND METHOD OF FABRICATING THIS TRANSISTOR
摘要 This organic field-effect transistor comprises a semiconductor layer (10) made of an organic semiconductor material. The mobility µsup of the charge carriers in a first volume of the semiconductor layer is ten times greater than the mobility µmf of the charge carriers in a second volume of the semiconductor layer, the first volume corresponding to the 10% of the volume of the semiconductor layer that are closest to the gate electrode and the second volume corresponding to the 10% of the volume of the semiconductor layer that are closest to the drain and source electrodes.
申请公布号 WO2009016301(A3) 申请公布日期 2009.04.16
申请号 WO2008FR51330 申请日期 2008.07.15
申请人 SOFILETA;BENWADIH, MOHAMED 发明人 BENWADIH, MOHAMED
分类号 H01L51/10 主分类号 H01L51/10
代理机构 代理人
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