| 发明名称 |
DIAPHRAGM ISOLATION FORMING THROUGH SUBTRACTIVE ETCHING |
| 摘要 |
Described herein is a housing comprising an inside and at least one sidewall, wherein the at least one sidewall comprises inner and outer surfaces. An etch stop deposit is disposed over at least a portion of the housing, and a diaphragm material deposit is disposed over at least a portion of the etch stop deposit.
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| 申请公布号 |
US2009098318(A1) |
申请公布日期 |
2009.04.16 |
| 申请号 |
US20070872596 |
申请日期 |
2007.10.15 |
| 申请人 |
KAVLICO CORPORATION |
发明人 |
GUZIAK ROBERT;GANDARIA ENRIQUE |
| 分类号 |
B32B1/00;B05D1/36;B32B3/00;B44C1/22;C25D5/02 |
主分类号 |
B32B1/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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