| 摘要 |
PROBLEM TO BE SOLVED: To expand a ratio between a current flowing in a sense resistor and that flowing in a high-withstand voltage semiconductor switching element in a semiconductor device having an overcurrent protection function for the high-withstand voltage semiconductor switching element, thus enabling variations in current value to be reduced on which the overcurrent protection function acts. SOLUTION: Aside from a first emitter region 104 needed for a switching operation, there is formed a second emitter region 110 that is electrically connected to a current detection circuit and yet electrically connected to the first emitter region 104 through a sense resistor 123 in a high-withstand voltage semiconductor switching element. While no emitter electrode is formed on the second emitter region 110, an emitter electrode is formed on that part of a base region 103 which is adjacent to the second emitter region 110. COPYRIGHT: (C)2009,JPO&INPIT
|
