| 摘要 |
PROBLEM TO BE SOLVED: To suppress the influence of heat generation caused by write current of a magnetic random access memory by reducing the write current. SOLUTION: A magnetic domain wall moving type MRAM has a magnetic recording layer 10 formed of a ferromagnetic material, a nonmagnetic layer, and a fixed layer 12 connected to the magnetic recording layer via the nonmagnetic layer, the magnetic recording layer has a magnetization inverted region 102 disposed oppositely to the fixed layer 12, a first magnetization fixed layer 101 which is connected to the first boundary 21 of the magnetic inversion region and wherein the direction of magnetization is fixed, and a second magnetization fixed region 103 which is connected to the second boundary 22 of the magnetization inverted region and where the direction of magnetization is fixed, and a magnetic random access memory has a first via contact 32 connected to the first magnetization fixed region and a second via contact 33 connected to the second magnetization fixed region. One of the first via contact and second via contact is disposed above the magnetic recording layer and the other is disposed below the magnetic recording layer. COPYRIGHT: (C)2009,JPO&INPIT |
