发明名称 |
METHOD FOR MANUFACTURING SOI SUBSTRATE |
摘要 |
An object of the present invention is to provide a method for manufacturing an SOI substrate provided with a semiconductor layer which can be used practically even where a substrate having a low upper temperature limit such as a glass substrate is used. The manufacturing method compromises the steps of preparing a semiconductor substrate provided with a bonding layer formed on a surface thereof and a separation layer formed at a predetermined depth from the surface thereof, bonding the bonding layer to the base substrate having a distortion point of 700° C. or lower so that the semiconductor substrate and the base substrate face each other, and separating a part of the semiconductor substrate at the separation layer by heat treatment in order to form a single-crystal semiconductor layer over the base substrate. In the manufacturing method, a substrate which shrinks isotropically at least by the heat treatment is used as the base substrate.
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申请公布号 |
US2009098739(A1) |
申请公布日期 |
2009.04.16 |
申请号 |
US20080244414 |
申请日期 |
2008.10.02 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
OHNUMA HIDETO;SHINGU TAKASHI;KAKEHATA TETSUYA;KURIKI KAZUTAKA;YAMAZAKI SHUNPEI |
分类号 |
H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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