发明名称 METHODS OF FABRICATING SEMICONDUCTOR DEVICES HAVING RESISTORS
摘要 A semiconductor device having a resistor and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate having a first circuit region and a second circuit region. A lower interlayer insulating layer is provided over the semiconductor substrate. A first hole passing through the lower interlayer insulating layer in the first circuit region and a second hole passing through the lower interlayer insulating layer in the second circuit region are provided. A first semiconductor pattern and a second semiconductor pattern are sequentially stacked in the first hole. A first resistor having the same crystalline structure as the second semiconductor pattern is provided in the second hole.
申请公布号 US2009098703(A1) 申请公布日期 2009.04.16
申请号 US20080248470 申请日期 2008.10.09
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HA DAE-WON;KIM SANG-YOON
分类号 H01L21/20 主分类号 H01L21/20
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