发明名称 |
METHODS OF FABRICATING SEMICONDUCTOR DEVICES HAVING RESISTORS |
摘要 |
A semiconductor device having a resistor and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate having a first circuit region and a second circuit region. A lower interlayer insulating layer is provided over the semiconductor substrate. A first hole passing through the lower interlayer insulating layer in the first circuit region and a second hole passing through the lower interlayer insulating layer in the second circuit region are provided. A first semiconductor pattern and a second semiconductor pattern are sequentially stacked in the first hole. A first resistor having the same crystalline structure as the second semiconductor pattern is provided in the second hole.
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申请公布号 |
US2009098703(A1) |
申请公布日期 |
2009.04.16 |
申请号 |
US20080248470 |
申请日期 |
2008.10.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HA DAE-WON;KIM SANG-YOON |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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