| 发明名称 |
SEMICONDUCTOR DEVICE HAVING DEEP TRENCH CHARGE COMPENSATION REGIONS AND METHOD |
| 摘要 |
In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a charge compensating trench formed in proximity to active portions of the device. The charge compensating trench includes a trench filled with various layers of semiconductor material including opposite conductivity type layers.
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| 申请公布号 |
US2009096021(A1) |
申请公布日期 |
2009.04.16 |
| 申请号 |
US20080335730 |
申请日期 |
2008.12.16 |
| 申请人 |
LOECHELT GARY H;PARSEY JR JOHN M;ZDEBEL PETER J;GRIVNA GORDON M |
发明人 |
LOECHELT GARY H.;PARSEY, JR. JOHN M.;ZDEBEL PETER J.;GRIVNA GORDON M. |
| 分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
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