| 摘要 |
PROBLEM TO BE SOLVED: To provide a production process of a ferroelectric thin film capable of reducing thermal load in crystallization of ferroelectric substances, a ferroelectric memory and its production method, a semiconductor device and its production method. SOLUTION: A production method of a ferroelectric thin film of this invention comprises a step of forming a fine crystalline core 40 of an oxide by irradiating laser pulses or light of a lamp on the amorphous oxide thin film 30 formed on the substrate 10 and a step of forming a ferroelectric substance 50 by irradiating laser pulses or light of lamp on the thin film including the fine crystalline core 40 to crystalize the oxide. COPYRIGHT: (C)2009,JPO&INPIT
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