METHOD FOR MANUFACTURING SOI SUBSTRATE AND SEMICONDUCTOR DEVICE

摘要

A manufacturing method of an SOI(Silicone On Insulator) substrate and a manufacturing method of a semiconductor device are provided to reduce a crystal defect by performing a laser beam irradiation process and a wet etching process about a damage layer formed on a semiconductor wafer. A semiconductor wafer is prepared. A first insulation layer(102) containing nitride is formed on one surface of the semiconductor wafer. An ion beam accelerated by an electric field is irradiated on the semiconductor wafer through the first insulation layer. A damage layer is formed to a region of a fixed depth from one surface of the semiconductor wafer. A second insulation layer(104) is formed through the first insulation layer on the semiconductor wafer. The semiconductor wafer is bonded with a support substrate(107), and is heated in order to separate the semiconductor wafer from the damage layer. A wet etching process about a single crystal semiconductor layer is performed. A laser beam is irradiated on the single crystal semiconductor layer.