PROGRAMMING METHOD OF NON VOLATILE MEMORY DEVICE

摘要

A programming method of a non volatile memory device is provided to prevent overshooting when supplying a verify voltage by applying a second pass voltage before verify voltage. A program voltage(VPGM) is supplied to a selected word line, and a first pass voltage(VPASS) is supplied to non-selected word line. A program supplied to a selected word line is stopped. A first pass voltage supplied to the non-selected word line is shifted to the second pass voltage lower than the pass voltage. The shift process comprises a process of maintaining the turn on state of a high voltage switching part by maintaining a block word line voltage to a high level. A verify voltage lower than the second pass voltage is applied to the selected word line.