METHOD FOR FORMING CONTACT IN SEMICONDUCTOR DEVICE

摘要

A method for forming contact of the semiconductor device is provided to prevent the leakage current due to the silicon invasion and to reduce the contact resistance by filling the contact hole with the low resistivity metal film. The interlayer insulating film(114) is formed on the semiconductor substrate in which the bottom conductive layer is formed. The contact hole exposing the bottom conductive layer is formed on the interlayer insulating film. The metal layer is formed on the inner wall of the contact hole. The contact hole is filled with the silicon film. The semiconductor substrate is heat-treated and then the metal silicide is formed.