METAL CMP SLURRY COMPOSITIONS USING A NOVEL CORROSION INHIBITOR AND POLISHING METHOD USING THE SAME

摘要

A metal CMP slurry composition is provided to prevent the surface corrosion of polished wafer and the generation of organic residue. A chemical mechanical polishing slurry precursor composition comprises abrasive, complexing agent, anticorrosive agent and liquid carrier. The anticorrosive agent increases open circuit potential of open circuit potential at the state that does not add an anticorrosive agent, to 5-30%. The anticorrosive agent N,N-disubstituted aminomethyl benzotriazole derivative having a structure of the chemical formula (I): T-CH2-NR1R2.