发明名称 Manufacturing method of semiconductor integrated circuit device and probe card
摘要 Electrical testing is to be performed on a semiconductor integrated circuit device which the test pads formed. To facilitate such testing, the method of manufacture of the semiconductor integrated circuit device employs a probe card which has two or more contact terminals which can contact two or more electrodes. This probe card includes, in opposition to a wiring substrate of the semiconductor integrated circuit device in which a first wiring is formed, a first sheet having two or more contact terminals to contact the two or more electrodes; a second wiring electrically connected to the two or more contact terminals and the first wiring; and first dummy wirings which are near the region of formation of the two or more contact terminals, are arranged to a non-forming region of the second wiring, and do not participate in signal transfer.
申请公布号 US7517707(B2) 申请公布日期 2009.04.14
申请号 US20070783778 申请日期 2007.04.12
申请人 RENESAS TECHNOLOGY CORP. 发明人 OKAMOTO MASAYOSHI;MATSUMOTO HIDEYUKI;YORISAKI SHINGO;HASEBE AKIO;MOTOYAMA YASUHIRO;SHIMASE AKIRA
分类号 G01R31/26;G01R1/067;G01R1/073;G01R3/00;H01L21/66;H01L21/82 主分类号 G01R31/26
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