发明名称 Piezoelectric thin-film element
摘要 A piezoelectric thin-film element formed with a niobate lithium potassium sodium thin-film having a well-developed Perovskite structure and having an excellent piezoelectric characteristic. The piezoelectric thin-film 4 is a dielectric thin-film composed of a alkaline-niobic oxide represented by (Nax1Ky1Liz1) NbO3 (0<x1<1, 0<y1<1, 0<=z1<1, x1+y1+z1=1) and having a Perovskite structure, and the base dielectric thin film 6 composed of a alkaline-niobic oxide represented by (Nax2Ky2Liz2) NbO3 (0<x2<1, 0<y2<1, 0<=z2<1, x2+y2+z2=1) and having a Perovskite structure is provided between the lower electrode 3 and the piezoelectric thin-film 4.
申请公布号 US7518293(B2) 申请公布日期 2009.04.14
申请号 US20070756687 申请日期 2007.06.01
申请人 HITACHI CABLE, LTD. 发明人 SHIBATA KENJI;OKA FUMIHITO
分类号 H01L41/16 主分类号 H01L41/16
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