| 摘要 |
<p>An exposure mask having the light-shield pattern is provided to reduce the process time and process cost by reducing the failure rate in the probe test and laser repair process. The metal layer is formed on the top of the semiconductor substrate(600). The L shaped align key pattern(620) is formed by patterning the metal layer through the lithographically processing. The passivation layer is formed on the top of the overall structure including the L shaped align key pattern. The photosensitive film is coated onto on the top of the passivation layer. The photosensitive pattern is formed by performing the exposure development process using the exposure mask. The passivation layer pattern(635) is formed by etching the passivation layer. The scanning process is performed by using the side of L form align key pattern.</p> |
